Krishna Saraswat

Krishna Saraswat
Rickey/Nielsen Professor in the School of Engineering

Professor of Electrical Engineering

Professor of Materials Science & Engineering (by courtesy)

  Paul G. Allen Building, Rm. 326X
     420 Via Palou, MS 4075, Stanford, CA 94305-4075

  (650) 725-3610 Phone

  (650) 723-4659 Fax

  saraswat@stanford.edu


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    Prof. Saraswat received his B.E. degree in Electronics in 1968 from the Birla Institute of Technology and Science, Pilani, India, and his M.S. and Ph.D. degrees in Electrical Engineering in 1969 and 1974 respectively from Stanford University, Stanford, CA. Professor Saraswat stayed at Stanford as a researcher and was appointed Professor of Electrical Engineering in 1983. He serves on the leadership council of the MARCO/DARPA-funded Focus Center for Materials, Structures, and nano-Devices. He also has an honorary appointment of an Adjunct Professor at the Birla Institute of Technology and Science, Pilani, India since January 2004 and a Visiting Professor during the summer of 2007 at IIT Bombay, India. During 2000-2007 he was Associate Director of the NSF/SRC Center for Environmentally Benign Semiconductor Manufacturing. He has been a technical advisor, board member and consultant to several industrial organizations in USA, Asia and Europe. He has also advised several academic and government organizations world wide.

     Professor Saraswat's research interests are in new and innovative materials, structures, and process technology of silicon, germanium and III-V devices and interconnects for nanoelectronics and solar photovoltiacs. Special areas of his interest are: new device structures to continue scaling MOS transistors, DRAMs and flash memories to nanometer regime, 3-dimentional ICs with multiple layers of heterogeneous devices, metal and optical interconnections and solar cells.

     During 1969-70, he worked on microwave transistors at Texas Instruments. Returning to Stanford in 1971, he did his Ph.D. on high voltage MOS devices and circuits. After graduating he joined Stanford University as a Research Associate in 1975 and later became a Professor of Electrical Engineering in 1983. For the next 15 years, Prof. Saraswat worked on modeling of CVD of silicon, conduction in polysilicon, diffusion in silicides, contact resistance, interconnect delay and 2-D oxidation effects in silicon. He pioneered the technologies for aluminum/titanium layered interconnects, CVD of tungsten silicide MOS gates, CVD tungsten MOS gates and tunable workfunction SiGe MOS gates. During the late 80's he became interested in the economics and technology of single wafer manufacturing. He developed equipment and simulators for single wafer thermal processing, deposition and etching and technology for the in-situ measurements and real-time control. Jointly with Texas Instruments a microfactory for single wafer manufacturing was demonstrated in 1993. Since the mid 90's he has been working on new materials, devices and interconnects for scaling MOS technology to sub-10 nm regime. He has pioneered several new concepts of 3-D ICs with multiple layers of heterogeneous devices. His group demonstrated the first high performance germanium MOSFET with high-k dielectrics. He has been working on integration of germanium on silicon for high performance MOSFETs and optical interconnects. He has recently started research on high efficiency silicon,germanium and III-V multijunction solar cells.

     Prof. Saraswat has graduated more than 80 doctoral students and has authored or co-authored 10 patents and over 700 technical papers, of which 10 have received Best Paper Award. He is a Life Fellow of the IEEE. He received the Thomas Callinan Award from The Electrochemical Society in 2000 for his contributions to the dielectric science and technology, the 2004 IEEE Andrew Grove Award for seminal contributions to silicon process technology, Inventor Recognition Award from MARCO/FCRP in 2007 and the Technovisionary Award from the India Semiconductor Association in 2007 and the SIA Researcher of the Year Award in 2012. He is listed by ISI as one of the 250 Highly Cited Authors in his field.